PID Effect of c-Si Modules: Study of Degradation and Recovery to More Closely Mimic Field Behavior-Reference-Cited by-同舟云学术

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PID Effect of c-Si Modules: Study of Degradation and Recovery to More Closely Mimic Field Behavior

Published:2015-06-17 Issue:10 Volume:55 Page:1091-1097
ISSN:0021-2148
Container-title:Israel Journal of Chemistry
language:en
Short-container-title:Isr. J. Chem.

Author:

Jaeckel Bengt,Cosic Marijo,Arp Juergen

Publisher

Wiley

Subject

General Chemistry

Reference22 articles.

1. 35 th IEEE Photovoltaic Specialists Conference 2010

2. Electrochemical corrosion of SnO2:F transparent conducting layers in thin-film photovoltaic modules

3. Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition 2012

4. 40th IEEE Photovoltaic Specialists Conference 2014

5. Proceedings of the 28 th European Photovoltaic Solar Energy Conference and Exhibition 2013

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of Potential-Induced-Degradation of p-Type PERC Solar Cell Modules by an Ion-Diffusion Barrier Layer Underneath the Front Glass;Processes;2022-02-10

2. Long-term experiment on p-type crystalline PV module with potential induced degradation: Impact on power performance and evaluation of recovery mode;Renewable Energy;2022-01

3. Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization;Progress in Photovoltaics: Research and Applications;2018-02-27

4. Sodium Accumulation at Potential-Induced Degradation Shunted Areas in Polycrystalline Silicon Modules;IEEE Journal of Photovoltaics;2016-11

5. Investigations on the Formation of Stacking Fault-like PID-shunts;Energy Procedia;2016-08

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