In Situ Fabrication of Nanoepitaxial TiO2 Protection Layer on Si Substrate: Hole Chemical Conduction Instead of Tunneling Effect-Reference-Cited by-同舟云学术

In Situ Fabrication of Nanoepitaxial TiO2 Protection Layer on Si Substrate: Hole Chemical Conduction Instead of Tunneling Effect

Published:2017-07-07 Issue:8 Volume:1 Page:1700064
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Gao Liguo¹,Li Qun¹,Chen Hanlin¹,Hayase Shuji²,Ma Tingli¹²

Affiliation:

1. State Key Laboratory of Fine Chemicals, School Petroleum and Chemical Engineering, Dalian University of Technology; Panjin 124221 P. R. China

2. Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology; 2-4 Hibikino Wakamatsu, Kitakyushu Fukuoka 808-0196 Japan

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/solr.201700064/fullpdf

Reference28 articles.

1. Enabling Silicon for Solar-Fuel Production

2. Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes

3. Solar Water Splitting Cells

4. High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation

5. Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting

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