Deposition of aluminum nitride thin films by MOCVD from the trimethylaluminum-ammonia adduct-Reference-Cited by-同舟云学术

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Deposition of aluminum nitride thin films by MOCVD from the trimethylaluminum-ammonia adduct

Published:1996-01 Issue:1 Volume:2 Page:5-8
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Jones Anthony C.,Rushworth Simon A.,Houlton David J.,Roberts John S.,Roberts Victoria,Whitehouse Colin R.,Critchlow Gary W.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference27 articles.

1. GaN, AlN, and InN: A review

2. Growth of AlN on GaAs(110) by reactive molecular beam deposition

3. Microelectronics Packaging Handbook, Van Nostrand-Reinhold, New York 1989.

4. Thin aluminum nitride film resonators: miniaturized high sensitivity mass sensors

5. Novel metalorganic chemical vapor deposition system for GaN growth

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