Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition-Reference-Cited by-同舟云学术

Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition

Published:2019-08-25 Issue:11 Volume:13 Page:1900350
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Bolshakov Alexey D.¹^ORCID,Fedorov Vladimir V.¹,Sibirev Nikolai V.²,Fetisova Marina V.¹,Moiseev Eduard I.¹,Kryzhanovskaya Natalia V.¹,Koval Olga Yu.¹,Ubyivovk Evgeniy V.²³,Mozharov Alexey M.²,Cirlin George E.¹⁴⁵⁶,Mukhin Ivan S.¹²

Affiliation:

1. St. Petersburg Academic University Khlopina 8/3 194021 St. Petersburg Russia

2. ITMO University Kronverkskij 49 197101 St. Petersburg Russia

3. St. Petersburg State University 7/9 Universitetskaya emb. 199034 St. Petersburg Russia

4. Ioffe Institute Politekhnicheskaya 29 194021 Saint Petersburg Russia

5. Institute for Analytical InstrumentationRAS Rizhsky Pr., 26 190103 St. Petersburg Russia

6. Saint Petersburg Electrotechnical University “LETI” Prof. Popova 5 197376 St. Petersburg Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900350

Reference57 articles.

1. Light-Emitting Diodes

2. GaP-nucleation on exact Si (001) substrates for III/V device integration

3. Bridging the Gap between Dielectric Nanophotonics and the Visible Regime with Effectively Lossless Gallium Phosphide Antennas

4. Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

5. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interplay of Kinetic and Thermodynamic Factors in the Stationary Composition of Vapor–Liquid–Solid IIIVxV1−x Nanowires;Nanomaterials;2024-08-09

2. Interfacial profiles in vapor-liquid-solid grown III-V axial nanowire heterostructures based on group V interchange;Physical Review Materials;2024-07-19

3. Self-Consistent Model for the Compositional Profiles in Vapor–Liquid–Solid III–V Nanowire Heterostructures Based on Group V Interchange;Nanomaterials;2024-05-07

4. Why Is the Bandgap of GaP Indirect While That of GaAs and GaN Are Direct?;physica status solidi (RRL) – Rapid Research Letters;2024-03-29

5. Growth Mechanism of Monolayer on the Top Facet of Ga-Catalyzed GaAs and GaP Nanowires;Technical Physics Letters;2024-02