Role of ZrO 2 Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors
Author:
Affiliation:
1. Semiconductor Materials LabMaterials Science SectionRaja Ramanna Centre for Advanced Technology Indore 452013 India
2. Homi Bhabha National InstituteTraining School Complex Anushakti Nagar Mumbai 400094 India
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900265
Reference35 articles.
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