Persistent layer-by-layer growth for pulsed-laser homoepitaxy of $(000\bar 1)$ ZnO
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
2. Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits
3. Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
5. ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type $\hbox{ZnCo}_{2}\hbox{O}_{4}$ Gate
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