Determination of Defect Densities in Thin (i) a‐Si:H Used as the Passivation Layer in a‐Si:H/c‐Si Heterojunction Solar Cells from Static Planar Conductance Measurements-Reference-Cited by-同舟云学术

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Determination of Defect Densities in Thin (i) a‐Si:H Used as the Passivation Layer in a‐Si:H/c‐Si Heterojunction Solar Cells from Static Planar Conductance Measurements

Published:2019-09-26 Issue:12 Volume:13 Page:1900411
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Levtchenko Alexandra¹,Le Gall Sylvain¹^ORCID,Brüggemann Rudolf¹,Kleider Jean-Paul¹^ORCID

Affiliation:

1. GeePs, UMR 8507, CNRS, CentraleSupélecUniversité Paris-SudUniversité Paris-SaclaySorbonne Université 11 rue Joliot-Curie Plateau de Moulon F-91192 Gif-sur-Yvette Cedex France

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900411

Reference39 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. Solar cell efficiency tables (Version 53)

3. Twenty-two percent efficiency HIT solar cell

4. n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis

5. Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films

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