Yield analysis of large-area high-power single-chip GaN-based light-emitting diodes with network design-Reference-Cited by-同舟云学术

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Yield analysis of large-area high-power single-chip GaN-based light-emitting diodes with network design

Published:2014-01-23 Issue:3 Volume:8 Page:260-263
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Wang Wei,Cai Yong,Zhang Yibin,Huang Hongjuan,Huang Wei,Li Haiou,Zhang Baoshun

Funder

National Natural Science Foundation of China

Jiangsu Natural Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201308308/fullpdf

Reference11 articles.

1. Prospects for LED lighting

2. Solid-State Light Sources Getting Smart

3. High-Power and High-Efficiency InGaN-Based Light Emitters

4. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

5. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and Modeling of Thermal-Electric Coupling Effect of High-Power Monolithically Integrated Light-Emitting Diode;IEEE Transactions on Electron Devices;2018-02

2. Demonstration of wafer‐level white light emitting diode with 92,000 lm luminous flux;physica status solidi c;2017-02-22

3. Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs;Applied Surface Science;2016-03

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