Dopant‐Free Twinning Superlattice Formation in InSb and InP Nanowires-Reference-Cited by-同舟云学术

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Dopant‐Free Twinning Superlattice Formation in InSb and InP Nanowires

Published:2017-10-05 Issue:11 Volume:11 Page:1700310
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Yuan Xiaoming¹²^ORCID,Guo Yanan²,Caroff Philippe²,He Jun¹,Tan Hark Hoe²,Jagadish Chennupati²

Affiliation:

1. School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University932 South Lushan RoadChangshaHunan 410083P. R. China

2. Department of Electronic Materials Engineering, Research School of Physics & Engineering, The Australian National UniversityCanberraACT 2601Australia

Funder

Australian Research Council

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201700310

Reference56 articles.

1. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

2. GaAs/AlGaAs Nanowire Photodetector

3. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

4. Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

5. Optically pumped room-temperature GaAs nanowire lasers

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1. A Physical Model of Nanotwin Unit and Orientation Organization for Designing Mechanical Performance: Cases of InSb, GaAs, ZnS;Advanced Functional Materials;2023-10-06

2. Germanium polytypes formation on AlGaAs nanowire surface;ST PETER POLY U J-PH;2023

3. Thermal Conductivity of GaAs Nanowire Arrays Measured by the 3ω Method;Nanomaterials;2022-04-10

4. Thermal transport in twinning superlattice and mixed-phase GaAs nanowires;Nanoscale;2022

5. Shear induced deformation twinning evolution in thermoelectric InSb;npj Computational Materials;2021-07-16

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