2D time-domain numerical Maxwell/transport modeling for THz distributed gallium nitride transferred electron device-Reference-Cited by-同舟云学术

2D time-domain numerical Maxwell/transport modeling for THz distributed gallium nitride transferred electron device

Published:2017-01-24 Issue:2 Volume:31 Page:e2213
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Dalle Christophe¹

Affiliation:

1. Institut d'Electronique, de Microélectronique et de Nanotechnologies; Villeneuve d'Ascq France

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference27 articles.

1. Theoretical contribution to the design of millimeter-wave TEO's;Friscourt;IEEE Trans. Electron Dev,march 1983

2. Theoretical investigation of THz GaN mesa transferred-electron device by means of time domain energy/momentum modeling;Dalle;IEEE Trans Electron Dev,2012

3. Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique;Gruzinskis;Semicond Sci Technol,2001

4. Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, dopin, and length;Garcia;J Appl Phys,2013

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1. Electromagnetic Physical Numerical Modeling of a GaN Distributed Transferred Electron Device–Based Planar Waveguide THz Oscillator;IEEE Transactions on Magnetics;2020-02

2. Electromagnetic physical modeling of a gallium nitride distributed transferred electron based planar waveguide structure THz oscillator;Advanced Electromagnetics;2019-09-11

3. Special issue: The 10th International Symposium on Electric and Magnetic Fields (EMF 2016);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-01-29