Affiliation:
1. School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215006 China
2. Department of Electronic Engineering The Chinese University of Hong Kong Shatin NT Hong Kong SAR 999077 China
3. South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China
Abstract
AbstractThe unique band structure of monolayer transition metal dichalcogenides (TMDC) provides an important platform for spintronic and valleytronic devices. Various approaches, such as in‐plane electric field and out‐of‐plane magnetic field, have been proposed to actively control the valley polarization. In this work, we propose a synergistic effect involving chiral near‐field interactions and hot carrier injection to actively control the valley polarization emission of WSe2 at room temperature (RT). The degree of valley polarization is enhanced from near zero (for pure WSe2) to 20% under non‐resonant optical excitation (532 nm) when monolayer WSe2 is coupled with the chiral near field of plasmonic metasurface. More importantly, the application of near‐infrared light (wavelength of 970 to 1600 nm) illumination further enhances the valley polarization from 20% to 30%, which is attributed to plasmonic‐induced hot carrier injection from the metasurface to WSe2. The synergistic effect of the chiral near field and infrared light pumping offers another strategy to manipulate the valley polarization emission in monolayer TMDs at room temperature, paving the way for future applications of opto‐valleytronic/spintronic devices based on these 2D materials.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province