High power‐handling SPDT switch in 0.25‐µm GaN technology

Author:

Polli G.1ORCID,Palomba M.1,Colangeli S.1,Ciccognani W.1,Salvucci A.1,Vittori M.1,Limiti E.1

Affiliation:

1. Electronic Engineering DepartmentUniversity of Rome “Tor Vergata”, Via del Politecnico 1Rome00133 Italy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm;IEICE Electronics Express;2024-09-10

2. A 6–18 GHz High Power-Handling Switch in GaN Technology;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

3. Design Analysis of Wideband 24-40GHz GaN-on-Si SPDT Switches for 5G Millimeter-Wave Applications;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

4. A circuit‐based neuro‐space mapping technique for small‐signal modeling of multi‐gate GaN HEMT switches;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-13

5. Spoof surface plasmon polariton‐based switch using liquid metal;International Journal of RF and Microwave Computer-Aided Engineering;2021-04-08

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