Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond-Reference-Cited by-同舟云学术

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Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond

Published:2021-05-27 Issue:8 Volume:52 Page:1446-1451
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Zhang Shengya¹^ORCID,Zhang Zhuangfei²,Yi Wencai¹,Chen Xin¹,Liu Xiaobing¹^ORCID

Affiliation:

1. Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering Qufu Normal University Qufu China

2. Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics Zhengzhou University Zhengzhou China

Funder

Natural Science Fund for Distinguished Young Scholars of Shandong Province

National Natural Science Foundation of China

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.6165

Reference35 articles.

1. Preparation of Semiconducting Diamonds

2. Determination of boron in natural semiconducting diamond by prompt particle nuclear microanalysis and Schottky barrier differential-capacitance measurements

3. Electrical-Transport Measurements on Synthetic Semiconducting Diamond

4. Semiconductivity of a Type IIbDiamond

5. Boron–oxygen complex yields n-type surface layer in semiconducting diamond

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A viable mechanism to form boron-bearing diamonds in deep Earth;Science Bulletin;2023-07

2. The structure and multifunctionality of high-boron transition metal borides ^*;Journal of Physics: Condensed Matter;2023-02-24

3. Investigating the H-bond network of ternary (xylitol-water-acetic acid) aqueous solutions by Raman spectroscopy and DFT;Journal of Molecular Liquids;2023-02

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