Recent Advance in Low‐Dielectric‐Constant Organosilicon Polymers

Author:

Hou Jiaren123,Sun Jing12,Fang Qiang12

Affiliation:

1. Key Laboratory of Synthetic and Self‐Assembly Chemistry for Organic Functional Molecules Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences 345 Lingling Road Shanghai 200032 China

2. Center for Excellence in Molecular Synthesis, Shanghai Institute of Organic Chemistry Chinese Academy of Sciences 345 Lingling Road Shanghai 200032 China

3. University of Chinese Academy of Sciences 19 Yuquan Road Shijinshan District Beijing 100049 China

Abstract

Comprehensive SummaryLow dielectric (low‐k) organosilicon polymers have received extensive interests from industry and academia due to good electrical insulation, high temperature resistance, flame retardancy and hydrophobicity. These attractive properties enable them to be utilized as low‐k materials in fabrication of electronic devices in high‐frequency communication technology. This review summarizes recent progress in developing low‐k organosilicon polymers, including the synthetic methods and properties of different organosilicon polymers classified according to the chemical structures. It may provide some inspiration to design new low‐k organosilicon polymers for application in the future.

Publisher

Wiley

Subject

General Chemistry

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