Incorporation concentration dependence of phosphorus in the deposition of silicon epitaxial layers from silane-phosphine-hydrogen mixtures-Reference-Cited by-同舟云学术

Incorporation concentration dependence of phosphorus in the deposition of silicon epitaxial layers from silane-phosphine-hydrogen mixtures

Published:1979 Issue:3 Volume:14 Page:333-342
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Kühne H.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference6 articles.

1. The Incorporation of Phosphorus in Silicon Epitaxial Layer Growth

2. Ein Beitrag zur modellmäßigen Beschreibung des Dotanteneinbaus bei der einkristallinen Siliziumabscheidung aus der Gasphase

3. Die Temperaturabhängigkeit des Dotanteneinbaus bei der Abscheidung von Siliziumepitaxieschichten aus der Gasphase (I) Der Phosphoreinbau und die Natur des Segregationskoeffizienten

4. Electrical Properties of Silicon Containing Arsenic and Boron

5. Doping of epitaxial silicon

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The current understanding of epitaxial CVD silicon layer doping in the light of modelling and theory development (IV). The problem of more-than-one kind of dopant species;Crystal Research and Technology;1987-07

2. The Incorporation of Boron in Silicon Epitaxial Layer Growth in the Presence of Small Amounts of Water;Journal of The Electrochemical Society;1984-08-01

3. On the adsorption- and equilibrium-referred interpretation of the doping element incorporation during the growth of CVD epitaxial silicon;Crystal Research and Technology;1983

4. Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (V). Incorporation of arsenic;Kristall und Technik;1980

5. Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (IV). Incorporation of phosphorus in the Si-H-Cl-lP system;Kristall und Technik;1980