Versetzungsnachweis auf {100}-Flächen von GaAs-Einkristallen-Reference-Cited by-同舟云学术

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Versetzungsnachweis auf {100}-Flächen von GaAs-Einkristallen

Published:1974 Issue:9 Volume:9 Page:1041-1050
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Richter H.,Schulz M.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference17 articles.

1. Etching of Dislocations on the Low‐Index Faces of GaAs

2. Dislocation-free GaAs by the liquid encapsulation technique

3. Dislocation Etch Pits in Single Crystal GaAs

4. Investigation of Microprecipitates in Highly Te-Doped GaAs Crystals

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrochemical Detection of Defects in Ge / GaAs Structures by an Anodic Dissolution Method under Illumination;Journal of The Electrochemical Society;1993-07-01

2. Non-uniform etching of single crystal GaAs;Materials Letters;1985-04

3. A eutectic dislocation etch for gallium arsenide;Journal of Electronic Materials;1984-09

4. Defect‐Revealing Etches on GaAs : A Comparison of the AHA with the A/B and KOH Etches;Journal of The Electrochemical Society;1981-05-01

5. Transmission electron microscopy study of microdefects in dislocation‐free GaAs and InP crystals;Journal of Applied Physics;1979-05

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