Synthesis of ZnSnN2crystals via a high-pressure metathesis reaction-Reference-Cited by-同舟云学术

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Synthesis of ZnSnN2crystals via a high-pressure metathesis reaction

Published:2016-02-29 Issue:3 Volume:51 Page:220-224
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Kawamura F.¹,Yamada N.²,Imai M.³,Taniguchi T.¹

Affiliation:

1. National Institute for Materials Science (NIMS); Namiki 1-1 Tsukuba, Ibaraki 305-0044 Japan

2. Department of Applied Chemistry; Chubu University; 1200 Matsumoto Kasugai Aichi 487-8501 Japan

3. National Institute for Materials Science (NIMS); Sengen 1-2-1 Tsukuba Ibaraki 305-0047 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference25 articles.

1. Electronic and lattice dynamical properties of II-IV-N2 semiconductors

2. Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2

3. Quasiparticle band structure of Zn-IV-N2compounds

4. Bandgap Tunability in Zn(Sn,Ge)N2Semiconductor Alloys

5. Modification of (Zn1+xGe)(N2Ox) Solid Solution as a Visible Light Driven Photocatalyst for Overall Water Splitting

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1. Synthesis and Comprehensive Studies of Be‐IV‐N₂ (IV=Si, Ge): Solving the Mystery of Wurtzite‐Type Pmc2₁ Structures;Angewandte Chemie;2024-09-03

2. Synthesis and Comprehensive Studies of Be‐IV‐N₂ (IV=Si, Ge): Solving the Mystery of Wurtzite‐Type Pmc2₁ Structures;Angewandte Chemie International Edition;2024-09-02

3. Pressure and atomic size effects of IV cation on mechanical and electronic properties of Zn-IV-N2 (IV Si, Ge and Sn): First principles calculation;Computational Condensed Matter;2024-09

4. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

5. High-temperature growth of ZnSnN₂ layer via radiofrequency magnetron sputter epitaxy;Japanese Journal of Applied Physics;2024-05-01

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