Trapping of Oxygen Vacancies at Crystallographic Shear Planes in Acceptor‐Doped Pb‐Based Ferroelectrics-Reference-Cited by-同舟云学术

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Trapping of Oxygen Vacancies at Crystallographic Shear Planes in Acceptor‐Doped Pb‐Based Ferroelectrics

Published:2015-10-21 Issue:49 Volume:127 Page:15000-15003
ISSN:0044-8249
Container-title:Angewandte Chemie
language:en
Short-container-title:Angew. Chem.

Author:

Batuk Dmitry¹,Batuk Maria¹,Tsirlin Alexander A.²³,Hadermann Joke¹,Abakumov Artem M.¹⁴

Affiliation:

1. EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp (Belgium)

2. National Institute of Chemical Physics and Biophysics, 12618, Tallinn (Estonia)

3. Experimental Physics VI, EKM, University of Augsburg, 86159 Augsburg (Germany)

4. Chemistry Department, Moscow State University, 119991, Moscow (Russia)

Funder

Russian Science Foundation

Federal Ministry for Education and Research

Alexander von Humboldt Foundation

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ange.201507729

Reference23 articles.

1. Stability of Fe3+ — VO defect pairs in polycrystalline Pb(Ti,Zr)O3

2. Fe3+defect dipole centers in ferroelectricPbTiO3studied using electron paramagnetic resonance

3. Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields

4. High-frequency electron paramagnetic resonance investigation of the Fe3+ impurity center in polycrystalline PbTiO3 in its ferroelectric phase

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