Aluminum-doped Zn1 − x Mg x O as transparent conductive oxide of Cu(In,Ga)(S,Se)2 -based solar cell for minimizing surface carrier recombination-Reference-Cited by-同舟云学术

Aluminum-doped Zn1 − x Mg x O as transparent conductive oxide of Cu(In,Ga)(S,Se)2 -based solar cell for minimizing surface carrier recombination

Published:2017-06-21 Issue:12 Volume:25 Page:996-1004
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Chantana Jakapan¹^ORCID,Kato Takuya²,Sugimoto Hiroki²,Minemoto Takashi¹

Affiliation:

1. Department of Electrical and Electronic Engineering; Ritsumeikan University; 1-1-1 Nojihigashi Kusatsu Shiga 525-8577 Japan

2. Atsugi Research Center; Solar Frontier K K; Atsugi Kanagawa 243-0206 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Effects of heavy alkali elements in Cu(In,Ga)Se2 solar cells with efficiencies up to 22.6%;Jackson;Phys Status Solidi Rapid Res Lett,2016

2. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells;Chirila;Nat Mater,2013

3. Kamada R Yagioka T Adachi S Handa A Tai KF Kato T Sugimoto H New world record Cu(In,Ga)(Se,S) 2 thin film solar cell efficiency beyond 22% rd

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