Aluminum-doped Zn1 − x Mg x O as transparent conductive oxide of Cu(In,Ga)(S,Se)2 -based solar cell for minimizing surface carrier recombination-Reference-Cited by-同舟云学术

Aluminum-doped Zn1 − x Mg x O as transparent conductive oxide of Cu(In,Ga)(S,Se)2 -based solar cell for minimizing surface carrier recombination

Published:2017-06-21 Issue:12 Volume:25 Page:996-1004
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Chantana Jakapan¹^ORCID,Kato Takuya²,Sugimoto Hiroki²,Minemoto Takashi¹

Affiliation:

1. Department of Electrical and Electronic Engineering; Ritsumeikan University; 1-1-1 Nojihigashi Kusatsu Shiga 525-8577 Japan

2. Atsugi Research Center; Solar Frontier K K; Atsugi Kanagawa 243-0206 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference34 articles.

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2. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells;Chirila;Nat Mater,2013

3. Kamada R Yagioka T Adachi S Handa A Tai KF Kato T Sugimoto H New world record Cu(In,Ga)(Se,S) 2 thin film solar cell efficiency beyond 22% rd

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