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Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz

  • Published:2012-11-15 Issue:6 Volume:23 Page:655-661
  • ISSN:1096-4290
  • Container-title:International Journal of RF and Microwave Computer-Aided Engineering
  • language:en
  • Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Álvarez-Botero Germán1,Torres-Torres Reydezel1,Murphy-Arteaga Roberto S.1

Affiliation:

1. Department of Electronics; Instituto Nacional de Astrofísica; Óptica y Electrónica; INAOE; 72840 Puebla Mexico

Funder

CONACyT

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference15 articles.

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2020-03-26

2. The large world of FET small-signal equivalent circuits (invited paper);International Journal of RF and Microwave Computer-Aided Engineering;2016-08-17
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