Defect‐Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers-Reference-Cited by-同舟云学术

Defect‐Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers

Published:2022-06-15 Issue:17 Volume:10 Page:2102711
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Nisi Katharina¹²,Kiemle Jonas¹²,Powalla Lukas³,Scavuzzo Alessio³,Nguyen Tuan Dung⁴⁵,Taniguchi Takashi⁶,Watanabe Kenji⁷,Duong Dinh Loc⁴⁵,Burghard Marko³,Holleitner Alexander W.¹²^ORCID,Kastl Christoph¹²

Affiliation:

1. Walter Schottky Institut and Physics Department Technical University of Munich 85748 Garching Germany

2. Munich Center for Quantum Science and Technology (MCQST) 80799 Munich Germany

3. Max‐Planck‐Institut für Festkörperforschung 70569 Stuttgart Germany

4. Center for Integrated Nanostructure Physics (CINAP) Institute for Basic Science (IBS) Suwon 16419 Republic of Korea

5. Department of Energy Science Sungkyunkwan University Suwon 16419 Republic of Korea

6. International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305‐0044 Japan

7. Research Center for Functional Materials National Institute for Materials Science Tsukuba 305‐0044 Japan

Funder

Deutsche Forschungsgemeinschaft

Institute for Basic Science

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202102711

Reference63 articles.

1. Light–matter interaction in transition metal dichalcogenides and their heterostructures

2. Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

3. Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

4. Defect engineering of two-dimensional transition metal dichalcogenides

5. Atomistic defects as single-photon emitters in atomically thin MoS2

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