Affiliation:
1. Key Laboratory of Physics and Technology for Advanced Batteries Ministry of Education College of Physics Jilin University Changchun 130012 China
Abstract
AbstractMagnesium chalcogenide with wide bandgap semiconductor is an important candidate for the next generation semiconductor for optoelectronic devices. Colloidal magnesium chalcogenide (MgS, MgSe, and MgTe) nanocrystals are produced with the colloidal method, showing the optoelectronic properties for wide bandgap semiconductors in the violet region. The shape and size of magnesium chalcogenide nanocrystals are precisely controlled via tuning the precursors and ligands. Magnesium chalcogenide are further deposited on ZnSe and ZnS quantum dots for shell materials to enhance fluorescence emission due to the wide bandgap and suitable lattice in magnesium chalcogenide. Magnesium chalcogenide in nanoscale exhibits the potential for wide‐band semiconductors and the shell materials to light‐emitting quantum dots.
Funder
Natural Science Foundation of Jilin Province
National Key Research and Development Program of China