Affiliation:
1. Yangtze Delta Region Institute (Huzhou) & School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Huzhou 313001 P. R. China
2. School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 China
Abstract
AbstractNear‐infrared organic photodetectors (NIR‐OPDs) play important roles in medical monitoring, bio‐imaging and night vision, etc. Among them, bulk heterojunction (BHJ)‐based photodiode type NIR‐OPDs exhibit extraordinary characteristics in photoresponse and photosensitivity. However, their dark current density (Jd) often increases severely as the bias voltage increases, which seriously reduces detection sensitivity for NIR light. Here, a novel structure of dual external electron injection barrier layers (DEBLs) composed of “m‐MTDATA/DPEPO:HAT‐CN” is proposed to overcome this challenge. For DEBLs, a barrier is established with high injection barrier and long effective injection barrier width to prevent external electrons injection under bias voltage for suppressing Jd (4.22 × 10−8 A cm−2 better than 1.47 × 10−5 A cm−2 of the traditional device at −2 V). More importantly, photo‐generated carriers have almost no loss through DEBLs. Therefore, high and stable detectivity (D*) over 1013 Jones are realized under 850 nm from 0 V to nearly −1 V and even far over 1012 Jones at −2 V. More strikingly, the structure of DEBLs is proven to be effective and universal in NIR‐OPDs and the device based on it successfully realize the real‐time heart rate monitoring of various human states, which exhibits great potential in human health monitoring.
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献