An All‐Silicon Metalens Integrated with a Mid‐Wave Infrared Black Phosphorus Photodiode

Author:

Lien Max R.1,Wang Nan2,Wenger Tobias3,Wang Han12,Gunapala Sarath D.3,Povinelli Michelle L.1

Affiliation:

1. Ming Hsieh Department of Electrical and Computer Engineering University of Southern California Los Angeles CA 90089 USA

2. Mork Family Department of Chemical Engineering & Materials Science University of Southern California Los Angeles CA 90089 USA

3. Jet Propulsion Laboratory California Institute of Technology 4800 Oak Grove Dr. Pasadena California 91109 USA

Abstract

AbstractBlack phosphorus (BP) is a promising material for mid‐wave infrared (MWIR) photodetection because of its direct tunable bandgap and compatibility with a wide range of substrates, particularly silicon. However, optical signal collection in BP devices can be limited by its absorber thickness or active area. Dielectric metasurface lenses, which can be directly integrated into a device's substrate, are a scalable approach to increase the signal collected by BP photodetectors. This work presents the design, fabrication, and characterization of an all‐silicon metasurface lens for focusing MWIR light through its substrate. Then, a BP‐MoS2 heterojunction photodetector is integrated with the metalens, and MWIR photodetection increases at room temperature. These results demonstrate that integrated metasurface lenses are an excellent approach for boosting the performance of MWIR BP photodetectors.

Funder

Army Research Office

National Aeronautics and Space Administration

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference44 articles.

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4. Emerging low-dimensional materials for mid-infrared detection

5. Black Phosphorus Mid-Infrared Photodetectors with High Gain

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