Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications-Reference-Cited by-同舟云学术

Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications

Published:2020-08-12 Issue:10 Volume:6 Page:2000242
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Pereira Maria¹^ORCID,Deuermeier Jonas¹,Nogueira Ricardo¹,Carvalho Patrícia Almeida²³,Martins Rodrigo¹,Fortunato Elvira¹,Kiazadeh Asal¹

Affiliation:

1. i3N/CENIMAT Department of Materials Science Faculty of Science and Technology Universidade NOVA de Lisboa and CEMOP/UNINOVA Campus de Caparica Caparica 2829‐516 Portugal

2. Materials Physics, SINTEF 0373 Oslo, Norway

3. CeFEMA Instituto Superior Técnico (IST) Universidade de Lisboa Lisboa 1049‐001 Portugal

Funder

Norges Forskningsråd

European Research Council

Fundação para a Ciência e a Tecnologia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000242

Reference64 articles.

1. Resistive switching materials for information processing

2. End of Moore's law: thermal (noise) death of integration in micro and nano electronics

3. Synaptic electronics: materials, devices and applications

4. Memory and Information Processing in Neuromorphic Systems

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