Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector

Author:

Zhao Qianru12,Yan Haoran13,Wang Xudong1ORCID,Chen Yan14,Zhang Shukui15,Wu Shuaiqin14,Huang Xinning12,Di Yunxiang16,Xiong Ke13,Zeng Jinhua12,Jiao Hanxue12,Lin Tie1,He Hu7,Ge Jun1,Meng Xiangjian1,Shen Hong1,Chu Junhao124,Wang Jianlu146

Affiliation:

1. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 China

2. University of Chinese Academy of Sciences No.19 A Yuquan Road Beijing 100049 China

3. School of Materials Science and Engineering Xiangtan University Xiangtan Hunan 411105 China

4. Shanghai Frontier Base of Intelligent Optoelectronics and perception Institute of Optoelectronics Fudan University Shanghai 200433 China

5. Hangzhou Institute for Advanced Study Hangzhou 310024 China

6. Frontier Institute of Chip and System Fudan University Shanghai 20043 China

7. Unit 32184 Haidian District Beijing 100089 China

Abstract

Abstract2D materials are considered as potential candidates for the next generation of optoelectronic materials. However, their optical absorption is typically weak due to thickness limitations, greatly restricting the photodetection capabilities of devices. To enhance the photoelectric gain of 2D materials or devices and improve detection sensitivity, various modulation methods such as strain, electric field, and magnetic field are commonly introduced. Among them, surface acoustic wave (SAW) represents a unique and effective modulation approach. In this study, photodetectors are fabricated based on few‐layer MoS2 on a SAW delay line on a LiTaO3 substrate. The interaction between SAW and MoS2 successfully manipulates the optoelectronic performance of the MoS2‐based devices. Under the influence of SAW, the dark current of the devices is significantly reduced by more than two orders of magnitude, while the photocurrent remains almost unchanged, resulting in excellent photoresponse performance. The devices provide a promising pathway for high‐performance optoelectronic applications and reveal a new possibility for acoustic devices in optoelectronics.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Natural Science Foundation of Shanghai Municipality

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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