Affiliation:
1. Department of Applied Physics The Hong Kong Polytechnic University Kowloon 999077 Hong Kong
2. School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Ave Singapore 639798 Singapore
3. State Key Laboratory of Material Processing & Die Mold Technology Huazhong University of Science and Technology Wuhan 430074 China
Abstract
AbstractLead‐free polycrystalline manganese telluride holds great potential in the development of waste heat recovery due to its fascinating physical properties. However, the poor thermoelectric (TE) performance in the p‐type MnTe alloys always results from their inferior carrier concentration, leading to low power factor and high thermal conductivity which restrict the overall thermoelectric performance. In this work, the problem is solved by decoupling its electrical and thermal transports through the hole donor Ge‐deficiency in MnTe + x mol.% GeTe (0 ≤ x ≤ 4) compounds. Intrinsically, extra GeTe in MnTe + x mol.% GeTe compound offers free charge carriers due to a narrow bandgap comparatively, realizing not only a full assessment of stimulated electrical performance but also an enhanced power factor. Moreover, benefiting from the nano‐precipitates and tweed microstructures, the lattice thermal conductivity effectively reduces due to the intensive phonon scattering accordingly. Ultimately, a maximum ZT of ≈1.2 at 873 K in the 3 mol.% GeTe doped MnTe sample is realized.
Funder
National Natural Science Foundation of China
Huazhong University of Science and Technology