An Electronic Synapse Based on 2D Ferroelectric CuInP 2 S 6-Reference-Cited by-同舟云学术

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An Electronic Synapse Based on 2D Ferroelectric CuInP 2 S 6

Published:2020-11-09 Issue:12 Volume:6 Page:2000760
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Li Bochang¹²,Li Sifan¹²,Wang Han³,Chen Li¹²,Liu Liang³,Feng Xuewei¹²,Li Yesheng¹²,Chen Jingsheng³,Gong X.¹²,Ang Kah‐Wee¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering National University of Singapore 4 Engineering Drive 3 Singapore 117583

2. Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546

3. Department of Materials Science and Engineering National University of Singapore 9 Engineering Drive 1 Singapore 117575

Funder

Science and Engineering Research Council

National Research Foundation Singapore

Ministry of Education - Singapore

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000760

Reference41 articles.

1. Hitting the memory wall

2. The future of electronics based on memristive systems

3. Nanoionics-based resistive switching memories

4. Phase Change Materials and Their Application to Nonvolatile Memories

5. FeRAM technology for high density applications

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1. Synapse with Diverse Plasticity in Ferroelectric BaTiO₃ Thin Films for Neuromorphic Computing;The Journal of Physical Chemistry C;2024-01-24

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3. Reconfigurable multifunctional neuromorphic memristor fabricated from two-dimensional ReSe2 ferroelectric nanosheet films;Applied Physics Reviews;2024-01-08

4. From fundamentals to frontiers: a review of memristor mechanisms, modeling and emerging applications;Journal of Materials Chemistry C;2024

5. Planar memristor and artificial synaptic simulating based on two-dimensional layered tungsten oxychloride WO2Cl2;Applied Physics Letters;2023-12-11

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