Exploring Charge Transport in High‐Temperature Polymorphism of ITIC Derivatives in Simple Processed Unipolar Bottom Contact Organic Field‐Effect Transistor-Reference-Cited by-同舟云学术

Exploring Charge Transport in High‐Temperature Polymorphism of ITIC Derivatives in Simple Processed Unipolar Bottom Contact Organic Field‐Effect Transistor

Published:2021-12-10 Issue: Volume: Page:2100743
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Avalos Quiroz Yatzil Alejandra¹,Koganezawa Tomoyuki²,Perkhun Pavlo¹^ORCID,Barulina Elena¹,Ruiz Carmen M.³,Ackermann Jörg¹^ORCID,Yoshimoto Noriyuki⁴,Videlot‐Ackermann Christine¹^ORCID

Affiliation:

1. Aix Marseille Université UMR CNRS 7325, CINaM Marseille 13288 France

2. Industrial Application Division Japan Synchrotron Radiation Research Institute (JASRI) Sayo Hyogo 679‐5198 Japan

3. Aix Marseille Université Université de Toulon UMR CNRS 7334, IM2NP Marseille 13397 France

4. Department of Physical Science and Materials Engineering Iwate University Ueda Morioka 0208551 Japan

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100743

Reference78 articles.