Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe<sub>2</sub>O<sub>3</sub>/Pt Bilayers-Reference-Cited by-同舟云学术

Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe₂O₃/Pt Bilayers

Published:2023-05-25 Issue:8 Volume:9 Page:
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Fan Yihong¹^ORCID,Zhang Pengxiang²^ORCID,Han Jiahao²³^ORCID,Lv Yang¹^ORCID,Liu Luqiao²^ORCID,Wang Jian‐Ping¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering University of Minnesota 200 Union St. SE Minneapolis Minnesota 55455 USA

2. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Ave. Room 38–401 Cambridge MA 02139 USA

3. Research Institute of Electrical Communication Tohoku University 2‐1‐1 Katahira, Aoba‐ku Sendai 980‐8577 Japan

Abstract

AbstractUnidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic insulator Fe2O3/Pt structure is reported. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness‐dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work reveals the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet‐based spintronic devices.

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202300232

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