A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide-Reference-Cited by-同舟云学术

A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

Published:2020-05-08 Issue:6 Volume:6 Page:2000057
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Chen Li¹²,Wang Lin¹²,Peng Yue³,Feng Xuewei¹²,Sarkar Soumya⁴,Li Sifan¹²,Li Bochang¹²,Liu Liang⁵,Han Kaizhen¹,Gong Xiao¹,Chen Jingsheng⁵,Liu Yan³,Han Genquan³,Ang Kah‐Wee¹²^ORCID

Affiliation:

1. Department of Electrical and Computer EngineeringNational University of Singapore 4 Engineering Drive 3 Singapore 117583 Singapore

2. Centre for Advanced 2D MaterialsNational University of Singapore 6 Science Drive 2 Singapore 117546 Singapore

3. State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian University No. 2 Taibai South Road, Yanta District Xi’an Shaanxi Province 710071 China

4. NUSNNI‐NanoCoreNational University of Singapore T‐Lab Building, 5A Engineering Drive 1 Singapore 117411 Singapore

5. Department of Materials Science and EngineeringNational University of Singapore 9 Engineering Drive 1 Singapore 117575 Singapore

Funder

Science and Engineering Research Council

National Research Foundation Singapore

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000057

Reference62 articles.