Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices-Reference-Cited by-同舟云学术

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Published:2022-02-11 Issue:7 Volume:8 Page:2101314
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Fang Li¹²,Qiu Chenguang¹^ORCID,Zhang Hongjie³,Hu Yue³,Peng Lian‐Mao¹²

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‐based Electronics Department of Electronics Peking University Beijing 100871 China

2. Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China

3. Key Laboratory of Carbon Materials of Zhejiang Province College of Chemistry and Materials Engineering Wenzhou University Wenzhou 325000 China

Funder

Key Technologies Research and Development Program

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101314

Reference45 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz

3. Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR

4. Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

5. Voltage-controlled multiple-valued logic design using negative differential resistance devices

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