Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices-Reference-Cited by-同舟云学术

Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices

Published:2022-12-23 Issue:3 Volume:9 Page:2200975
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Rao Dheemahi¹^ORCID,Pillai Ashalatha Indiradevi Kamalasanan²^ORCID,Garbrecht Magnus²^ORCID,Saha Bivas³^ORCID

Affiliation:

1. Chemistry and Physics of Materials Unit, and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India

2. Sydney Microscopy and Microanalysis The University of Sydney NSW 2006 Australia

3. Chemistry and Physics of Materials Unit International Centre for Materials Science, and School of Advanced Materials (SAMat) Jawaharlal Nehru Centre for Advanced Scientific Research Bangalore 560064 India

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200975

Reference50 articles.

1. 2022 roadmap on neuromorphic computing and engineering

2. Roadmap on emerging hardware and technology for machine learning

3. Principles of Artificial Neural Networks

4. Do we have brain to spare?

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