Manipulating Strain in Transistors: From Mechanically Sensitive to Insensitive-Reference-Cited by-同舟云学术

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Manipulating Strain in Transistors: From Mechanically Sensitive to Insensitive

Published:2022-03-19 Issue:7 Volume:8 Page:2101288
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Li Ming‐Zheng¹²,Guo Liang‐Chao¹³,Liu Gang⁴,Yan Yan⁵,Zhang Meng⁵,Han Su‐Ting⁴,Zhou Ye¹^ORCID

Affiliation:

1. Institute for Advanced Study Shenzhen University Guangdong 518060 China

2. Advanced Research Center China Star Optoelectronics Technology Guangdong 518132 China

3. College of Mechanical Engineering Yangzhou University Jiangsu 225127 China

4. Institute of Microscale Optoelectronics Shenzhen University Guangdong 518060 China

5. College of Electronics and Information Engineering Guangdong 518060 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101288

Reference162 articles.

1. Controlled Nonvolatile Transition in Polyoxometalates-Graphene Oxide Hybrid Memristive Devices

2. Bioresorbable silicon electronic sensors for the brain

3. Strain‐Engineering of Contact Energy Barriers and Photoresponse Behaviors in Monolayer MoS 2 Flexible Devices

4. A Low-Operating-Power and Flexible Active-Matrix Organic-Transistor Temperature-Sensor Array

5. Flexible active-matrix displays and shift registers based on solution-processed organic transistors

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1. Strain-insensitive bioelectronics;Chemical Engineering Journal;2024-02

2. Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors;Micromachines;2023-12-24

3. Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices;ACS Nano;2023-05-12

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