Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory-Reference-Cited by-同舟云学术

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Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Published:2021-03-31 Issue:5 Volume:7 Page:2100164
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Liwei¹,Mai Xianliang¹,Gu Rongchuan¹,Liu Long¹,Xiong Changying¹,Yang Zhe¹,Tong Hao¹,Cheng Xiaomin¹,Xu Ming¹,Zhou Peng²^ORCID,Miao Xiangshui¹^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

2. State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100164

Reference43 articles.

1. Phase-change materials for rewriteable data storage

2. Tailoring Transient‐Amorphous States: Towards Fast and Power‐Efficient Phase‐Change Memory and Neuromorphic Computing

3. Neuromorphic computing using non-volatile memory

4. Mixed-precision in-memory computing

5. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

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1. Multi-layer heterojunction phase change thin films with extremely low resistance drift;Ceramics International;2024-08

2. Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se;Applied Physics Letters;2024-05-27

3. Growth and microstructure of GeTe-Sb2Te3 heterostructures prepared by pulsed laser deposition;Applied Surface Science;2024-05

4. Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping;ACS Applied Materials & Interfaces;2024-03-27

5. Realization of fast-speed and low-power phase change memory by optimizing Ge10Sb90 film with samarium doping;Applied Physics Letters;2024-01-01

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