Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing-Reference-Cited by-同舟云学术

Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing

Published:2022-08 Issue:8 Volume:8 Page:2200378
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Lee Hyunjoon¹,Ryu Da Gil¹,Lee Giho¹^ORCID,Song Min‐Kyu²,Moon Hyungjin¹^ORCID,Lee Jaehyeong¹^ORCID,Ryu Jongchan¹^ORCID,Kang Ji‐Hoon³,Suh Junmin²,Kim Sangbum⁴^ORCID,Lim Jongwoo⁵,Jeon Dongsuk⁶,Kim Seyoung⁷^ORCID,Kim Jeehwan²³^ORCID,Lee Yun Seog¹^ORCID

Affiliation:

1. Department of Mechanical Engineering Seoul National University Seoul 08826 Republic of Korea

2. Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

3. Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA 02139 USA

4. Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea

5. Department of Chemistry Seoul National University Seoul 08826 Republic of Korea

6. Graduate School of Convergence Science and Technology Seoul National University Seoul 08826 Republic of Korea

7. Department of Materials Science and Engineering Pohang University of Science and Technology Pohang 37673 Republic of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200378

Reference33 articles.

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