On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes-Reference-Cited by-同舟云学术

On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes

Published:2021-11-16 Issue: Volume: Page:2100788
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

García‐Hemme Eric¹^ORCID,Caudevilla Daniel¹,Algaidy Sari¹,Pérez‐Zenteno Francisco¹,García‐Hernansanz Rodrigo¹,Olea Javier¹,Pastor David¹,del Prado Álvaro¹,San Andrés Enrique¹,Mártil Ignacio¹,González‐Díaz Germán¹

Affiliation:

1. Dpto. de Estructura de la Materia Física Térmica y Electrónica Univ. Complutense de Madrid Madrid 28040 Spain

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100788

Reference64 articles.

1. Infrared detectors: status and trends

2. Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

3. Hybrid Integrated Platforms for Silicon Photonics

4. High-performance Ge-on-Si photodetectors

5. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

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