Controllable Growth Orientation of SnS2Flakes for Low-Noise, High-Photoswitching Ratio, and Ultrafast Phototransistors-Reference-Cited by-同舟云学术

Controllable Growth Orientation of SnS2Flakes for Low-Noise, High-Photoswitching Ratio, and Ultrafast Phototransistors

Published:2015-12-04 Issue:3 Volume:4 Page:419-426
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Yang Dun¹,Li Bing¹,Hu Chao¹,Deng Hui¹,Dong Dongdong¹,Yang Xiaokun¹,Qiao Keke¹,Yuan Shengjie¹,Song Haisheng¹

Affiliation:

1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information; Huazhong University of Science and Technology; 1037 Luoyu Road Wuhan 430074 Hubei P. R. China

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Research Fund for the Doctoral Program of Higher Education

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adom.201500506/fullpdf

Reference37 articles.

1. Photoluminescence from Chemically Exfoliated MoS2

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

5. Control of valley polarization in monolayer MoS2 by optical helicity

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