Affiliation:
1. Institute of Nanoscience and Applications, Southern University of Science and Technology, Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong‐Hong Kong‐Macao Joint Laboratory for Photonic‐Thermal‐Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen China 518055
Abstract
Since ZnO nanoparticles are employed as an electron transport layer in quantum dot light‐emitting diode (QLED), the electroluminescence efficiency of QLED is greatly boosted. However, the QLED stability still faces the challenge. Herein, we modify the ZnMgO nanoparticles with the thiol ligand, which can improve the efficiency and stability of QLED at the same time. As a result, the maximum external quantum efficiency of QLED is improved from 18.6% to 26.0%, accompanied by enhanced voltage sweep stability. Our work provides a practical method to enhance the performance of QLED.