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Artificial neural network applications in improved noise wave modeling of microwave FETs

  • Published:2008-10 Issue:10 Volume:50 Page:2512-2516
  • ISSN:0895-2477
  • Container-title:Microwave and Optical Technology Letters
  • language:en
  • Short-container-title:Microw. Opt. Technol. Lett.

Author:

Marinković Zlatica D.,Pronić-Rančić Olivera,Marković Vera

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Design of microwave GaAs MESFET's for broad-band low-noise amplifiers;Fukui;IEEE Trans Microwave Theory Tech,1979

2. Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence;Pospieszalski;IEEE Trans Microwave Theory Tech,1989

3. A wave approach to the noise properties of linear microwave devices;Meys;IEEE Trans Microwave Theory Tech,1978

4. Wave techniques for noise modeling and measurement;Wedge;IEEE Trans Microwave Theory Tech,1992

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development and validation of ANN approach for extraction of MESFET/HEMT noise model parameters;Electrical Engineering;2017-04-21

2. Extraction of microwave FET noise wave temperatures by using a novel neural approach;COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering;2016-01-04

3. Microwave noise parameter modeling of a GaAs HEMT under optical illumination;Microwave and Optical Technology Letters;2015-11-26

4. New neural method for bias dependent noise modelling of microwave transistors;Journal of Communications Technology and Electronics;2014-11
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