p‐GeSe/n‐ReS 2 Heterojunction Rectifier Exhibiting A Fast Photoresponse with Ultra‐High Frequency‐Switching Applications-Reference-Cited by-同舟云学术

p‐GeSe/n‐ReS 2 Heterojunction Rectifier Exhibiting A Fast Photoresponse with Ultra‐High Frequency‐Switching Applications

Published:2021-10-23 Issue:22 Volume:8 Page:2100705
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Dastgeer Ghulam¹^ORCID,Afzal Amir Muhammad²,Nazir Ghazanfar³,Sarwar Nasir⁴

Affiliation:

1. Department of Physics and Astronomy and Graphene Research Institute‐Texas Photonics Center International Research Center (GRI–TPC IRC) Sejong University Seoul 05006 Korea

2. Department of Physics Riphah International University Raiwind Road Lahore Pakistan

3. Department of Chemistry Inha University 100 Inharo Incheon 22212 Republic of Korea

4. School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

Funder

Sejong University

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100705

Reference50 articles.

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5. Distinct Detection of Thermally Induced Spin Voltage in Pt/WS2/Ni81Fe19 by the Inverse Spin Hall Effect

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