UV to NIR Broadband Flexible Photodetector Based on Solution‐Processed MoS2/PDPP3T Inorganic–Organic Hybrid Heterostructures

Author:

Tang Daxiu1,Du Zhenyu2,Xie Ying1,Zhao Feiyu1,Yang Xiangdong3,Gu Chenjie1ORCID,Shen Xiang1

Affiliation:

1. The Research Institute of Advanced Technology Ningbo University Ningbo 315211 China

2. College of Electronic and Information Engineering Tongji University Shanghai 201804 China

3. Institute of Micro/Nano Materials and Devices Ningbo University of Technology Ningbo 315211 China

Abstract

AbstractMolybdenum disulfide (MoS2) is a 2D material with excellent electrical and optical properties, and developing a universal technology for the preparation of high‐performance MoS2‐based photodetector is extremely desirable. Here, a UV to NIR broadband flexible photodetector based on MoS2/(PDPP3T) inorganic–organic hybrid heterostructures is reported. In the experiment, high crystalline 2H‐phase few‐layer MoS2 nanoflakes are first prepared by optimized electrochemical intercalation of tetraheptylammonium cation (THA+) and ultrasound‐assisted exfoliation strategy. Thereafter, a narrow bandgap organic semiconductor PDPP3T is introduced to construct the MoS2/Poly(diketopyrrolopyrrolothiophrn) (PDPP3T) heterojunction. Experimental results reveal that the photodetector can have broadband photo response from 380 to 980 nm. Meanwhile, excellent responsivities and detectivity of 12.4 mA W−1, 2.2 × 1010 Jones at 380 nm and 0.1 mA W−1 and 5 × 108 Jones at 980 nm are achieved, which are ≈10 (UV band)/100 (NIR band) times high than that obtained on the pure MoS2‐based detector. Moreover, the flexibility of the device is investigated by conformal covering the device on a curved surface (R = 5 and 2.5 mm), it shows that the photo response remains almost the same as that measured on the planar substrate, indicating the possible application in the wearable electronics.

Funder

Natural Science Foundation of Ningbo Municipality

Publisher

Wiley

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