2D Tungsten Chalcogenides: Synthesis, Properties and Applications-Reference-Cited by-同舟云学术

2D Tungsten Chalcogenides: Synthesis, Properties and Applications

Published:2020-05-17 Issue:13 Volume:7 Page:2000002
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Mohl Melinda¹,Rautio Anne‐Riikka¹²,Asres Georgies Alene³,Wasala Milinda⁴,Patil Prasanna Dnyaneshwar⁴,Talapatra Saikat⁴,Kordas Krisztian¹^ORCID

Affiliation:

1. Microelectronics Research Unit University of Oulu Oulu FI‐90570 Finland

2. Chemistry and Bioeconomy Team Centria University of Applied Sciences Kokkola FI‐67100 Finland

3. Center for Materials Engineering Addis Ababa Institute of Technology, 1000 Addis Ababa University School of Multi‐disciplinary Engineering Addis Ababa 1000 Ethiopia

4. Department of Physics Southern Illinois University Carbondale IL 62901 USA

Funder

Academy of Finland

Multidisciplinary University Research Initiative

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202000002

Reference157 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers

3. Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

4. Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

5. Morphology dependence of molybdenum disulfide transparent counter electrode in dye-sensitized solar cells

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