Very-Low-Temperature Integrated Complementary Graphene-Barristor-Based Inverter for Thin-Film Transistor Applications-Reference-Cited by-同舟云学术

Very-Low-Temperature Integrated Complementary Graphene-Barristor-Based Inverter for Thin-Film Transistor Applications

Published:2018-09-20 Issue:10 Volume:530 Page:1800224
ISSN:0003-3804
Container-title:Annalen der Physik
language:en
Short-container-title:ANNALEN DER PHYSIK

Author:

Heo Sunwoo¹,Lee Ho-In¹,Lee Hyeji¹,Kim Seung-Mo¹,Kim Kiyung¹,Kim Yun Ji¹,Kim So-Young¹,Kim Ji Hwan¹,Yoon Myung-Han¹,Lee Byoung Hun¹

Affiliation:

1. School of Materials Science and Engineering; Center for Emerging Electronic Devices and Systems; Gwangju Institute of Science and Technology; Gwangju 61005 Republic of Korea

Funder

Nano Materials Technology Development Program

Creative Materials Discovery Program

Global Frontier Hybrid Interface Materials

National Research Foundation of Korea

Ministry of Sciences and ICT (MSIT)

Publisher

Wiley

Subject

General Physics and Astronomy

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/andp.201800224/fullpdf

Reference39 articles.

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3. Woven Thin-Film Metal Interconnects

4. High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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4. Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier;AIP Advances;2019-09

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