87‐3: The Study of Brightness Drop of AMOLED Based on LTPS Process

Author:

Qing Haigang1,Wang Miao1,Guo Yonglin1,Jiang Zhiliang1,Hu Ming1,Qiu Haijun1,Zheng Kening1,Shi Bo1,Shi Shiming1,Yang DongFang1

Affiliation:

1. R&D Center of OLED Division Chengdu BOE Optoelectronics Technology Co., Ltd. No.1188, Hezuo Road, Hi‐tech West Zone Chengdu China

Abstract

The phenomenon of brightness drop (B/D) during one frame period exist in OLED panel using LTPS process. We analyzed how TFT leakage current lead to B/D in conventional circuit, and we also found that hysteresis is another important reason for B/D. Meanwhile, lots of approaches to improving B/D are discussed.

Publisher

Wiley

Reference5 articles.

1. Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays: A Comprehensive Study

2. Leakage current characteristics of offset-gate-structure polycrystalline-Silicon MOSFET's

3. Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

4. Driving method compensating for the hysteresis of polycrystalline silicon thin-film transistors for active-matrix organic light emitting diode displays,;Jung M.-H.;Japanese Journal of Applied Physics,2009

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