Modeling and experimental study of breakdown mechanisms in multichannel AIGaAs/GaAs power hemts-Reference-Cited by-同舟云学术

Modeling and experimental study of breakdown mechanisms in multichannel AIGaAs/GaAs power hemts

Published:1990-06 Issue:6 Volume:3 Page:195-199
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Temcamani Farid,Crosnier Yves,Lippens Didier,Salmer Georges

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. , , and , “Comparative Merits of AlGaAs/GaAs DMTs and Multiple Hetero-junctions AlGaAs/GaAs HEMTs for Power Amplification,” 13th WOCSDICE, Cabourg, France, May 89.

2. , , and , “Avalanche and Tunnelling Mechanisms in HEMT's Power Structures,” ESSDERC 88, Montpellier, France, Sept. 1988.

3. High-efficiency millimeter-wave GaAs/GaAlAs power HEMT's

4. A 30-GHz 1-W power HEMT

5. Theoretical analysis of the DC avalanche breakdown in GaAs MESFET's

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3. Theoretical analysis of the breakdown voltage in pseudomorphic HFETs;IEEE Transactions on Electron Devices;1996

4. Off-state breakdown in InAlAs/InGaAs MODFET's;IEEE Transactions on Electron Devices;1995

5. Physics of breakdown in InAlAs/n/sup +/-InGaAs heterostructure field-effect transistors;IEEE Transactions on Electron Devices;1994