Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

Author:

Amat E.,Kauerauf T.,Degraeve R.,Rodríguez R.,Nafría M.,Aymerich X.,Groeseneken G.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference8 articles.

1. Hot-electron-induced MOSFET degradation-Model, monitor, and improvement;Hu;IEEE Transactions on Electron Devices,1985

2. Hot-electron and hole-emission effects in short n-channel MOSFET's;Hofmann;IEEE Transactions on Electron Devices,1985

3. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs;Heremans;IEEE Transactions on Electron Devices,1988

4. Hot carrier effects in nMOSFETs in 0.1 um CMOS technology;Li;IEEE International Reliability Physics Symposium Proceedings,1999

5. Hot carrier degradation and ESD in submicrometer CMOS technologies: how do they interact?;Groeseneken;IEEE Transactions on Device and Materials Reliability,2001

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surrogate-Model-Based Analysis of Analog Circuits—Part II: Reliability Analysis;IEEE Transactions on Device and Materials Reliability;2011-09

2. Special Issue: 7th Spanish Conference on Electron Devices (CDE2009);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2010-06-09

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