Author:
Amat E.,Kauerauf T.,Degraeve R.,Rodríguez R.,Nafría M.,Aymerich X.,Groeseneken G.
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation
Reference8 articles.
1. Hot-electron-induced MOSFET degradation-Model, monitor, and improvement;Hu;IEEE Transactions on Electron Devices,1985
2. Hot-electron and hole-emission effects in short n-channel MOSFET's;Hofmann;IEEE Transactions on Electron Devices,1985
3. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs;Heremans;IEEE Transactions on Electron Devices,1988
4. Hot carrier effects in nMOSFETs in 0.1 um CMOS technology;Li;IEEE International Reliability Physics Symposium Proceedings,1999
5. Hot carrier degradation and ESD in submicrometer CMOS technologies: how do they interact?;Groeseneken;IEEE Transactions on Device and Materials Reliability,2001
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