Chemically amplified photoresists for 193-nm photolithography: Effect of molecular structure and photonic parameters on photopatterning-Reference-Cited by-同舟云学术

Chemically amplified photoresists for 193-nm photolithography: Effect of molecular structure and photonic parameters on photopatterning

Published:2010-03-15 Issue:6 Volume:48 Page:1271-1277
ISSN:0887-624X
Container-title:Journal of Polymer Science Part A: Polymer Chemistry
language:en
Short-container-title:J. Polym. Sci. A Polym. Chem.

Author:

Ridaoui Hassan,Dirani Ali,Soppera Olivier,Ismailova Esma,Brochon Cyril,Schlatter Guy,Hadziioannou Georges,Tiron Raluca,Bandelier Philippe,Sourd Claire

Publisher

Wiley

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Reference31 articles.

1. Chemical Amplification in High-Resolution Imaging Systems

2. Chemical Amplification Resists for Microlithography

3. Correlation of Nano Edge Roughness in Resist Patterns with Base Polymers

4. Effect of polymer molecular weight on AFM polymer aggregate size and LER of EUV resists

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive study on three typical photoacid generators using photoelectron spectroscopy and ab initio calculations;The Journal of Chemical Physics;2024-08-06

2. Dual nonionic photoacids synergistically enhanced photosensitivity for chemical amplified resists;Chemical Engineering Journal;2024-02

3. Engineering Silk Protein to Modulate Polymorphic Transitions for Green Lithography Resists;ACS Applied Materials & Interfaces;2022-12-16

4. Deep-UV photoinduced chemical patterning at the micro- and nanoscale for directed self-assembly;Scientific Reports;2018-07-11

5. Novel Star Polymers as Chemically Amplified Positive-Tone Photoresists for KrF Lithography Applications;Industrial & Engineering Chemistry Research;2018-04-27