Influence of Solution Volume on the Dissolution Rate of Silicon Dioxide in Hydrofluoric Acid-Reference-Cited by-同舟云学术

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Influence of Solution Volume on the Dissolution Rate of Silicon Dioxide in Hydrofluoric Acid

Published:2014-11-14 Issue:2 Volume:16 Page:370-376
ISSN:1439-4235
Container-title:ChemPhysChem
language:en
Short-container-title:ChemPhysChem

Author:

Shvartsev Boris,Gelman Danny,Komissarov Ilia,Epshtein Alon,Starosvetsky David,Ein-Eli Yair

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics

Reference26 articles.

1. Real-time monitoring of SiO2/Si(111) interlayer etching by Brewster-angle reflectometry

2. A Study of the Dissolution of SiO[sub 2] in Acidic Fluoride Solutions

3. Etching Kinetics of Silicon Dioxide in Aqueous Fluoride Solutions: A Surface Complexation Model

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1. Understanding the contributions of F–, HF, and HF2– to the etching of SiO2 and unveiling the reaction kinetics to represent etching behavior of SiO2 up to pH 5;Applied Surface Science;2024-06

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3. Kinetic Regularities and Mathematical Modelling of Potassium Chloride Dissolution;Chemistry & Chemical Technology;2021-02-15

4. Fabrication of a stepped optical fiber tip for miniaturized scanners;Optical Fiber Technology;2021-01

5. Visualization of Charge Carrier Trapping in Silicon at the Atomic Surface Level Using Four-Dimensional Electron Imaging;The Journal of Physical Chemistry Letters;2019-04-03

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