Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells-Reference-Cited by-同舟云学术

Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells

Published:2017-09-15 Issue:11 Volume:25 Page:887-895
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

García Ivan¹^ORCID,Ochoa Mario¹^ORCID,Lombardero Iván¹^ORCID,Cifuentes Luis¹,Hinojosa Manuel¹,Caño Pablo¹,Rey-Stolle Ignacio¹^ORCID,Algora Carlos¹^ORCID,Johnson Andrew²,Davies Iwan²,Tan Kian Hua³,Loke Wan Khai³^ORCID,Wicaksono Satrio³,Yoon Soon Fatt³

Affiliation:

1. Instituto de Energía Solar; Universidad Politécnica de Madrid; 28040 Madrid Spain

2. IQE plc; Cardiff UK

3. Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Republic of Singapore

Funder

European Commission

Spanish MINECO

Oficina Regional de Coordinación de Salud Mental, Comunidad de Madrid

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Using dilute nitrides to achieve record solar cell efficiencies;Jones-Albertus;MRS Online Proc Libr Arch,Jan. 2013

2. High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique;Tukiainen;Prog Photovolt Res Appl,Jul. 2016

3. GaInP/GaInAs/GaInNAs/Ge four-junction solar cell grown by metal organic chemical vapor deposition with high efficiency;Zhang;Chin Phys Lett,2016

4. Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells†;Friedman;Prog Photovolt Res Appl,May 2001

5. GaNAsSb: how does it compare with other dilute III-V-nitride alloys?;Harmand;Semicond Sci Technol,2002

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